Role of ions in SiO2 deposition with pulsed and continuous helicon plasmas*
Christine Charles
Plasma Research Laboratory, Research School of Physical
Sciences and Engineering, The Australian National University, Canberra,
ACT 0200, Australia
Abstract: Good-quality silicon dioxide films have been deposited
at low temperature (200 °C) using continuous and pulsed oxygen/silane
plasmas coupled in a high-density, low-pressure helicon reactor. Although
the total ion flux determines many of the structural properties of the
deposited oxide, we have found that silicon-containing ions contribute
to the film growth (up to 50 %) and appear to be responsible for the
measured compressive stress.
* Lecture presented at the 15th International Symposium
on Plasma Chemistry, Orléans, France, 9-13 July 2001. Other presentations
are presented in this issue, pp. 317–492.
** Corresponding author.
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