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Pure Appl. Chem. Vol.
74, No. 9, pp. 1631-1641 (2002)
Pure and Applied
Vol. 74, Issue 9
Nonequilibrium processes for generating silicon nanostructures in
P. Sen1, and J. Akhtar1,2
1School of Physical Sciences, Jawaharlal Nehru University,
New Delhi 110067, India; 2Microelectronics Technology Group, Semiconductor
Devices Area, CEERI, Pilani, Rajasthan 333031, India
Abstract: The possibility of modifying existing materials through
technology has become the recipe for preparation of advanced materials.
Nonequilibrium processing of silicon through MeV ion irradiation will
be shown here to yield interesting properties. We propose localization
of vibrational energy following an ion irradiation process and their
transport (nonlinear transport of energy) through linear chains of a
single-crystalline lattice. The localization of energy can involve 34
atoms, and, hence, nanometer-sized entities evolve, distinguishable
from the remaining periodic lattice owing to their unique interatomic
distances. The energy required to produce these structures is supplied
by a single high-energy heavy ion, incident normal to a suitable crystal
face so as to lose energy by the electronic energy loss mechanism. These
entities can be trapped at a desired location that leads to silicon
nanostructures with modified band-gaps.
* Special Topic Issue on the Theme
of Nanostructured Advanced Materials
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