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Pure Appl. Chem. Vol. 74, No. 3, pp. 489-492 (2002)

Pure and Applied Chemistry

Vol. 74, Issue 3

How to exploit ion-induced stress relaxation to grow thick c-BN films*

P. Ziemann1,**, H.-G. Boyen1, N. Deyneka1, P. Widmayer§, and F. Banhart2

1Abteilung Festkörperphysik, Universität Ulm, D-89069 Ulm, Germany; 2ZE Elektronenmikroskopie, Universität Ulm, D-89069 Ulm, Germany

Abstract: A recently developed procedure is reviewed allowing thick (>1 mm), high-quality c-BN films (>80 % c-BN) to be grown. It is based on the observation that compressive stress inevitably present in such films can be released by medium-energy (some hundred keV) ion irradiation without destroying the cubic phase.

* Lecture presented at the 15th International Symposium on Plasma Chemistry, Orléans, France, 9-13 July 2001. Other presentations are presented in this issue, pp. 317–492.
** Corresponding author.


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