How to exploit ion-induced stress relaxation to grow thick c-BN
P. Ziemann1,**, H.-G. Boyen1, N. Deyneka1, P. Widmayer§, and F.
1Abteilung Festkörperphysik, Universität
Ulm, D-89069 Ulm, Germany; 2ZE Elektronenmikroskopie, Universität
Ulm, D-89069 Ulm, Germany
Abstract: A recently developed procedure is reviewed allowing
thick (>1 mm), high-quality c-BN films (>80 % c-BN) to be grown.
It is based on the observation that compressive stress inevitably present
in such films can be released by medium-energy (some hundred keV) ion
irradiation without destroying the cubic phase.
* Lecture presented at the 15th International Symposium
on Plasma Chemistry, Orléans, France, 9-13 July 2001. Other presentations
are presented in this issue, pp. 317492.
** Corresponding author.
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