I  U  P  A  C




News & Notices

Organizations & People

Standing Committees




. . CI
. . PAC
. . Macro. Symp.

. . Books
. . Solubility Data



Links of Interest

Search the Site

Home Page


Pure Appl. Chem. Vol. 74, No. 3, pp. 401-405 (2002)

Pure and Applied Chemistry

Vol. 74, Issue 3

Role of ions in SiO2 deposition with pulsed and continuous helicon plasmas*

Christine Charles

Plasma Research Laboratory, Research School of Physical Sciences and Engineering, The Australian National University, Canberra, ACT 0200, Australia

Abstract: Good-quality silicon dioxide films have been deposited at low temperature (200 °C) using continuous and pulsed oxygen/silane plasmas coupled in a high-density, low-pressure helicon reactor. Although the total ion flux determines many of the structural properties of the deposited oxide, we have found that silicon-containing ions contribute to the film growth (up to 50 %) and appear to be responsible for the measured compressive stress.

* Lecture presented at the 15th International Symposium on Plasma Chemistry, Orléans, France, 9-13 July 2001. Other presentations are presented in this issue, pp. 317–492.
** Corresponding author.


Page last modified 19 April 2002.
Copyright © 2002 International Union of Pure and Applied Chemistry.
Questions or comments about IUPAC, please contact, the Secretariat.
Questions regarding the website, please contact web manager.