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Pure Appl. Chem. Vol.
74, No. 3, pp. 397-400 (2002)
Pure and Applied Chemistry
Vol. 74, Issue 3
Diagnostics of etching plasmas*
Laboratoire de Physique et Technologie des Plasmas,
Ecole Polytechnique, 91128 Palaiseau, France
Abstract: Radio-frequency excited, low-pressure plasmas in halogen-containing
gases are widely used to etch submicronic features in a range of materials
during integrated circuit manufacture. Costly process-drift problems
are often caused by the ubiquitous deposition of polymer layers on the
reactor walls. Simple and robust sensors of the reactor performance
are needed to monitor and manage these effects. This paper presents
results obtained in industrial plasma-etching machines using a deposition-tolerant
ion flux probe and broadband UVvis absorption spectroscopy.
* Lecture presented at the 15th International Symposium
on Plasma Chemistry, Orléans, France, 9-13 July 2001. Other presentations
are presented in this issue, pp. 317492.
** Corresponding author.
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