I  U  P  A  C




News & Notices

Organizations & People

Standing Committees




. . CI
. . PAC
. . Macro. Symp.

. . Books
. . Solubility Data



Links of Interest

Search the Site

Home Page


Pure Appl. Chem. Vol. 74, No. 3, pp. 397-400 (2002)

Pure and Applied Chemistry

Vol. 74, Issue 3

Diagnostics of etching plasmas*

Jean-Paul Booth

Laboratoire de Physique et Technologie des Plasmas, Ecole Polytechnique, 91128 Palaiseau, France

Abstract: Radio-frequency excited, low-pressure plasmas in halogen-containing gases are widely used to etch submicronic features in a range of materials during integrated circuit manufacture. Costly process-drift problems are often caused by the ubiquitous deposition of polymer layers on the reactor walls. Simple and robust sensors of the reactor performance are needed to monitor and manage these effects. This paper presents results obtained in industrial plasma-etching machines using a deposition-tolerant ion flux probe and broadband UV­vis absorption spectroscopy.

* Lecture presented at the 15th International Symposium on Plasma Chemistry, Orléans, France, 9-13 July 2001. Other presentations are presented in this issue, pp. 317–492.
** Corresponding author.


Page last modified 19 April 2002.
Copyright © 2002 International Union of Pure and Applied Chemistry.
Questions or comments about IUPAC, please contact, the Secretariat.
Questions regarding the website, please contact web manager.